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Records 64,903

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Part Number	Description	In Stock
STT3PF30L STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.4A SOT23-6 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Power Dissipation (Max): 1.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	In Stock333 More on Order
STT4P3LLH6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4A SOT23-6 Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ H6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	In Stock3,800 More on Order
STT4PF20V STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3A SOT-23-6 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power Dissipation (Max): 1.6W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	In Stock170 More on Order
STT5N2VH5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V SOT23-6 Manufacturer: STMicroelectronics Series: STripFET™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 367pF @ 16V Power Dissipation (Max): 1.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	In Stock438 More on Order
STT5PF20V STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5A SOT23-6 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 2.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V Power Dissipation (Max): 1.6W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	In Stock383 More on Order
STT6N3LLH6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6A SOT23-6 Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 283pF @ 24V Power Dissipation (Max): 1.6W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	In Stock238 More on Order
STT7P2UH7 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 7A SOT23-6 Manufacturer: STMicroelectronics Series: STripFET™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 16V Power Dissipation (Max): 1.6W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	In Stock470 More on Order
STTFS010N10MCL ON Semiconductor	Transistors - FETs, MOSFETs - Single PTNG 100V LL Manufacturer: ON Semiconductor	In Stock118 More on Order
STU10N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V IPAK Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V Power Dissipation (Max): 85W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock347 More on Order
STU10NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A IPAK Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V Power Dissipation (Max): 70W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock4,227 More on Order
STU10NM65N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 9A IPAK Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Power Dissipation (Max): 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock407 More on Order
STU10P6F6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 10A IPAK Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V Power Dissipation (Max): 35W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock395 More on Order
STU11N65M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 7A IPAK Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V Power Dissipation (Max): 85W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock1,799 More on Order
STU11NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A IPAK Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Power Dissipation (Max): 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock306 More on Order
STU12N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9A IPAK Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 538pF @ 100V Power Dissipation (Max): 85W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock205 More on Order
STU12N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 8.5A IPAK Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 100V Power Dissipation (Max): 70W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock210 More on Order
STU13N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A IPAK Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock3,847 More on Order
STU13N65M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 10A IPAK Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V Power Dissipation (Max): 110W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock4,406 More on Order
STU13NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A IPAK Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V Power Dissipation (Max): 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock195 More on Order
STU150N3LLH6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A IPAK Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock4,577 More on Order
STU16N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 12A IPAK Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V Power Dissipation (Max): 110W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock4,767 More on Order
STU16N65M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 11A IPAK Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 718pF @ 100V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock1,385 More on Order
STU16N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 12A IPAK Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V Power Dissipation (Max): 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock452 More on Order
STU1HN60K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 1.2A IPAK Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V Power Dissipation (Max): 27W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock2,772 More on Order
STU25N10F7 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 100V 25A IPAK Manufacturer: STMicroelectronics Series: STripFET™ F7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock131 More on Order
STU27N3LH5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 27A IPAK Manufacturer: STMicroelectronics Series: STripFET™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V Vgs (Max): ±22V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock198 More on Order
STU2LN60K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 2A IPAK Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock432 More on Order
STU2N105K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1050V 1.5A IPAK Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 100V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock484 More on Order
STU2N62K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 620V 2.2A IPAK Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock254 More on Order
STU2N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 2A IPAK Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 100V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock4,725 More on Order

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