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Transistors

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SI7852ADP-T1-E3
SI7852ADP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 30A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
  • Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock3,903

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SI7852ADP-T1-GE3
SI7852ADP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 30A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
  • Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock11,859

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SI7852DP-T1-E3
SI7852DP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 7.6A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock95,513

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SI7852DP-T1-GE3
SI7852DP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 7.6A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock3,681

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SI7856ADP-T1-E3
SI7856ADP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 15A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock416

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SI7856ADP-T1-GE3
SI7856ADP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 15A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock455

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SI7858ADP-T1-E3
SI7858ADP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 12V 20A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 6V
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock109

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SI7858ADP-T1-GE3
SI7858ADP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 12V 20A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 6V
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock389

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SI7858BDP-T1-GE3
SI7858BDP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 12V 40A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 5760pF @ 6V
  • Power Dissipation (Max): 5W (Ta), 48W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock158

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SI7860ADP-T1-E3
SI7860ADP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 11A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock185

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SI7860ADP-T1-GE3
SI7860ADP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 11A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock492

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SI7860DP-T1-E3
SI7860DP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 11A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock279

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SI7860DP-T1-GE3
SI7860DP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 11A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock372

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SI7862ADP-T1-E3
SI7862ADP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 16V 18A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 29A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 7340pF @ 8V
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock249

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SI7862ADP-T1-GE3
SI7862ADP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 16V 18A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 29A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 7340pF @ 8V
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock331

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SI7866ADP-T1-E3
SI7866ADP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 40A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5415pF @ 10V
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock496

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SI7866ADP-T1-GE3
SI7866ADP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 40A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5415pF @ 10V
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock342

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SI7868ADP-T1-E3
SI7868ADP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 40A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock4,944

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SI7868ADP-T1-GE3
SI7868ADP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 40A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock281

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SI7880ADP-T1-E3
SI7880ADP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 40A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock4,854

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SI7880ADP-T1-GE3
SI7880ADP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 40A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock311

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SI7882DP-T1-E3
SI7882DP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 12V 13A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock233

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SI7882DP-T1-GE3
SI7882DP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 12V 13A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock173

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SI7884BDP-T1-E3
SI7884BDP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 58A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
  • Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock8,055

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SI7884BDP-T1-GE3
SI7884BDP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 58A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
  • Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock19,595

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SI7886ADP-T1-E3
SI7886ADP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 15A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock189

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SI7886ADP-T1-GE3
SI7886ADP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 15A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock151

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SI7888DP-T1-E3
SI7888DP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 9.4A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 12.4A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
  • Vgs (Max): ±12V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock131

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SI7888DP-T1-GE3
SI7888DP-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 9.4A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 12.4A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
  • Vgs (Max): ±12V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock302

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SI7892BDP-T1-E3
SI7892BDP-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 15A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3775pF @ 15V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock438

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