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Part Number	Description	In Stock
SI4890DY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±25V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock179 More on Order
SI4890DY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±25V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock309 More on Order
SI4892DY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.8A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 12.4A, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Vgs (Max): ±20V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock257 More on Order
SI4892DY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.8A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 12.4A, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Vgs (Max): ±20V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock383 More on Order
SI4894BDY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.9A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock4,061 More on Order
SI4894BDY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.9A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock196 More on Order
SI4896DY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 6.7A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.56W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,748 More on Order
SI4896DY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 6.7A 8SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.56W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock140 More on Order
SI5401DC-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.2A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs (Max): ±8V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock354 More on Order
SI5401DC-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.2A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs (Max): ±8V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock242 More on Order
SI5402BDC-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4.9A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock374 More on Order
SI5402BDC-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4.9A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock423 More on Order
SI5402DC-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4.9A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock470 More on Order
SI5402DC-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 4.9A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock490 More on Order
SI5403DC-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 6A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock4,426 More on Order
SI5404BDC-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 5.4A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 28mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): ±12V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock151 More on Order
SI5404BDC-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 5.4A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 28mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): ±12V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock266 More on Order
SI5406CDC-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 12V 6A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V Power Dissipation (Max): 2.3W (Ta), 5.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock488 More on Order
SI5406DC-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 12V 6.9A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs (Max): ±8V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock388 More on Order
SI5406DC-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 12V 6.9A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs (Max): ±8V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock122 More on Order
SI5410DU-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 12A PPAK CHIPFET Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 20V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single	In Stock154 More on Order
SI5411EDU-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 25A PPAK CHIPFET Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 6V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single	In Stock349 More on Order
SI5414DC-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock405 More on Order
SI5415AEDU-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 25A CHIPFET Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single	In Stock205 More on Order
SI5415EDU-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 25A PPAK CHIPFET Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single	In Stock283 More on Order
SI5418DU-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A PPAK CHIPFET Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single	In Stock482 More on Order
SI5419DU-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 12A PPAK CHIPFET Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PowerPak® ChipFet (3x1.9) Package / Case: 8-PowerVDFN	In Stock17,056 More on Order
SI5424DC-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock287 More on Order
SI5424DC-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock8,389 More on Order
SI5429DU-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 12A PWR PK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual	In Stock428 More on Order

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