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Transistors

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Part Number
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SI2342DS-T1-GE3
SI2342DS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 8V 6A SOT-23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V
  • Vgs (Max): ±5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 4V
  • Power Dissipation (Max): 2.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock95,993

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SI2343CDS-T1-GE3
SI2343CDS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 5.9A SOT-23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
  • Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock50,494

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SI2343DS-T1
SI2343DS-T1

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 3.1A SOT23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
  • Power Dissipation (Max): 750mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock216

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SI2343DS-T1-E3
SI2343DS-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 3.1A SOT23-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
  • Power Dissipation (Max): 750mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock14,862

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SI2343DS-T1-GE3
SI2343DS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 3.1A SOT-23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
  • Power Dissipation (Max): 750mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock12,400

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SI2347DS-T1-GE3
SI2347DS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 5A SOT-23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 15V
  • Power Dissipation (Max): 1.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock43,390

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SI2351DS-T1-E3
SI2351DS-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 2.8A SOT23-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Power Dissipation (Max): 1W (Ta), 2.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock223

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SI2351DS-T1-GE3
SI2351DS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 2.8A SOT23-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Power Dissipation (Max): 1W (Ta), 2.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock112

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SI2356DS-T1-GE3
SI2356DS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 4.3A SOT-23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 20V
  • Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock124,807

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SI2365EDS-T1-GE3
SI2365EDS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 5.9A TO-236

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock46,466

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SI2366DS-T1-GE3
SI2366DS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.8A SOT-23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 15V
  • Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock142

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SI2367DS-T1-GE3
SI2367DS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.8A SOT-23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 8V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
  • Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock3,809

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SI2369DS-T1-GE3
SI2369DS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 7.6A TO-236

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 15V
  • Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock215,046

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SI2371EDS-T1-GE3
SI2371EDS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 4.8A SOT-23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Vgs (Max): ±12V
  • Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock157

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SI2372DS-T1-GE3
SI2372DS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CHAN 30V SOT23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 288pF @ 15V
  • Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock118,893

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SI2374DS-T1-GE3
SI2374DS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CHAN 20V SOT23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 10V
  • Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock447

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SI2377EDS-T1-GE3
SI2377EDS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.4A SOT-23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock137,088

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SI2392ADS-T1-GE3
SI2392ADS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 3.1A SOT-23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
  • Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock9,739

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SI2392DS-T1-GE3
SI2392DS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 3.1A SOT-23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
  • Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock433

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SI2399DS-T1-GE3
SI2399DS-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 6A SOT-23

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 835pF @ 10V
  • Power Dissipation (Max): 2.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock245

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SI3127DV-T1-GE3
SI3127DV-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CHAN 60V TSOP6S

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 833pF @ 20V
  • Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
In Stock4,934

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SI3134KE-TP
SI3134KE-TP

Micro Commercial Co

Transistors - FETs, MOSFETs - Single

N-CHANNEL,MOSFETS,SOT-523 PACKAG

  • Manufacturer: Micro Commercial Co
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
In Stock304

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SI3134KL-TP
SI3134KL-TP

Micro Commercial Co

Transistors - FETs, MOSFETs - Single

N-CHANNEL MOSFET, SOT-883 PACKAG

  • Manufacturer: Micro Commercial Co
  • Series: *
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883
  • Package / Case: SC-101, SOT-883
In Stock303

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SI3134K-TP
SI3134K-TP

Micro Commercial Co

Transistors - FETs, MOSFETs - Single

N-CHANNEL MOSFET, SOT-723 PACKAG

  • Manufacturer: Micro Commercial Co
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 450mA, 1.8V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-723
  • Package / Case: SOT-723
In Stock104,181

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SI3139KE-TP
SI3139KE-TP

Micro Commercial Co

Transistors - FETs, MOSFETs - Single

P-CHANNEL MOSFET, SOT-523 PACKAG

  • Manufacturer: Micro Commercial Co
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 660mA
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 6V
  • Power Dissipation (Max): 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
In Stock169

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SI3139KL-TP
SI3139KL-TP

Micro Commercial Co

Transistors - FETs, MOSFETs - Single

P-CHANNEL MOSFET, SOT-883 PACKAG

  • Manufacturer: Micro Commercial Co
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 680mA
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 6V
  • Power Dissipation (Max): 100mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883
  • Package / Case: SC-101, SOT-883
In Stock201

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SI3139K-TP
SI3139K-TP

Micro Commercial Co

Transistors - FETs, MOSFETs - Single

P-CHANNEL MOSFET, SOT-723 PACKAG

  • Manufacturer: Micro Commercial Co
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 660mA
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Vgs (Max): ±6V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V
  • Power Dissipation (Max): 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-723
  • Package / Case: SOT-723
In Stock14,567

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SI3400A-TP
SI3400A-TP

Micro Commercial Co

Transistors - FETs, MOSFETs - Single

N-CHANNEL,MOSFETS,SOT-23 PACKAGE

  • Manufacturer: Micro Commercial Co
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1.155nF @ 15V
  • Power Dissipation (Max): 400mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock13,613

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SI3401A-TP
SI3401A-TP

Micro Commercial Co

Transistors - FETs, MOSFETs - Single

P-CHANNEL,MOSFETS,SOT-23 PACKAGE

  • Manufacturer: Micro Commercial Co
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
  • Power Dissipation (Max): 400mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock3,853

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SI3402-TP
SI3402-TP

Micro Commercial Co

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 4A SOT23

  • Manufacturer: Micro Commercial Co
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.34nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 15V
  • Power Dissipation (Max): 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock4,520

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