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Records 64,903

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Part Number	Description	In Stock
SCH1439-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 3.5A SCH6 Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	In Stock240 More on Order
SCH1439-TL-W ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 3.5A SOT563 Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563/SCH6 Package / Case: SOT-563, SOT-666	In Stock285 More on Order
SCH1601-A-TL-W ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16V SC28 Manufacturer: ON Semiconductor Series: *	In Stock290 More on Order
SCH2080KEC Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 40A TO-247 Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 800V Power Dissipation (Max): 262W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock3,828 More on Order
SCH2825-TL-E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 1.6A SCH6 Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 600mW (Ta) Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: 6-SMD, Flat Leads	In Stock138 More on Order
SCT10N120 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1.2KV TO247-3 Manufacturer: STMicroelectronics FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 400V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247™ Package / Case: TO-247-3	In Stock519 More on Order
SCT2080KEC Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 40A TO-247 Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 800V Power Dissipation (Max): 262W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock5,417 More on Order
SCT2080KEHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 800V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock117 More on Order
SCT20N120 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 20A HIP247 Manufacturer: STMicroelectronics FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 20V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 400V Power Dissipation (Max): 175W (Tc) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247™ Package / Case: TO-247-3	In Stock324 More on Order
SCT2120AFC Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 29A TO-220AB Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 156mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V Power Dissipation (Max): 165W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock1,464 More on Order
SCT2160KEC Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 22A TO-247 Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 800V Power Dissipation (Max): 165W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock6,765 More on Order
SCT2280KEC Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 14A TO-247 Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V Vgs(th) (Max) @ Id: 4V @ 1.4mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 667pF @ 800V Power Dissipation (Max): 108W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock3,118 More on Order
SCT2450KEC Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 10A TO-247 Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V Vgs(th) (Max) @ Id: 4V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 800V Power Dissipation (Max): 85W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock252 More on Order
SCT2750NYTB Rohm Semiconductor	Transistors - FETs, MOSFETs - Single 1700V .75 OHM 6A SIC FET Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 975mOhm @ 1.7A, 18V Vgs(th) (Max) @ Id: 4V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 800V Power Dissipation (Max): 57W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock2,910 More on Order
SCT2H12NYTB Rohm Semiconductor	Transistors - FETs, MOSFETs - Single 1700V 1.2 OHM 4A SIC FET Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Vgs(th) (Max) @ Id: 4V @ 410µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V Power Dissipation (Max): 44W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock2,819 More on Order
SCT2H12NZGC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1700V 3.7A Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Vgs(th) (Max) @ Id: 4V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V Power Dissipation (Max): 35W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PFM Package / Case: TO-3PFM, SC-93-3	In Stock1,144 More on Order
SCT3017ALHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 118A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V Vgs(th) (Max) @ Id: 5.6V @ 23.5mA Gate Charge (Qg) (Max) @ Vgs: 172nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 2884pF @ 500V Power Dissipation (Max): 427W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock277 More on Order
SCT3022ALGC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 650V 93A TO247N Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 2208pF @ 500V Power Dissipation (Max): 339W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock2,984 More on Order
SCT3022ALHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 2208pF @ 500V Power Dissipation (Max): 339W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock1,557 More on Order
SCT3022KLGC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single SCT3022KL IS AN SIC (SILICON CAR Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 2879pF @ 800V Power Dissipation (Max): 427W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock500 More on Order
SCT3022KLHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 2879pF @ 800V Power Dissipation (Max): 427W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock219 More on Order
SCT3030ALGC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 650V 70A TO247N Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1526pF @ 500V Power Dissipation (Max): 262W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock3,428 More on Order
SCT3030ALHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1526pF @ 500V Power Dissipation (Max): 262W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock432 More on Order
SCT3030KLGC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 1.2KV 72A TO247N Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 131nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 2222pF @ 800V Power Dissipation (Max): 339W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock1,568 More on Order
SCT3030KLHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 131nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 2222pF @ 800V Power Dissipation (Max): 339W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock1,840 More on Order
SCT3040KLGC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 1.2KV 55A TO247N Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Vgs(th) (Max) @ Id: 5.6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1337pF @ 800V Power Dissipation (Max): 262W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock3,035 More on Order
SCT3040KLHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Vgs(th) (Max) @ Id: 5.6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1337pF @ 800V Power Dissipation (Max): 262W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock680 More on Order
SCT3060ALGC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 650V 39A TO247N Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 852pF @ 500V Power Dissipation (Max): 165W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock2,036 More on Order
SCT3060ALHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 852pF @ 500V Power Dissipation (Max): 165W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock1,196 More on Order
SCT3080ALGC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 30A TO247 Manufacturer: Rohm Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 571pF @ 500V Power Dissipation (Max): 134W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock1,904 More on Order

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