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Transistors

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PMN48XP,125
PMN48XP,125

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.1A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
  • Power Dissipation (Max): 530mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock455

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PMN48XPAX
PMN48XPAX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.1A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
  • Power Dissipation (Max): 530mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock182

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PMN49EN,135

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4.6A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock368

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PMN49EN,165

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4.6A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock244

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PMN50EPEX
PMN50EPEX

Nexperia

Transistors - FETs, MOSFETs - Single

PMN50EPE/SOT457/SC-74

  • Manufacturer: Nexperia USA Inc.
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4.6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 15V
  • Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
In Stock255

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PMN50UPE,115
PMN50UPE,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.6A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 24pF @ 10V
  • Power Dissipation (Max): 510mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock159

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PMN50XP,165

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.8A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 20V
  • Power Dissipation (Max): 2.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock241

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PMN52XPX
PMN52XPX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.7A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 62mOhm @ 3.7A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 763pF @ 10V
  • Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock4,949

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PMN55ENEH
PMN55ENEH

Nexperia

Transistors - FETs, MOSFETs - Single

PMN55ENE/SOT457/SC-74

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 30V
  • Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock7,905

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PMN55ENEX
PMN55ENEX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 4.5A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 30V
  • Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock261

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PMN55LN,135

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 4.1A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 20V
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock449

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PMN70EPEX
PMN70EPEX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 4.4A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 15V
  • Power Dissipation (Max): 570mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock292

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PMN70XPE,115
PMN70XPE,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.2A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 602pF @ 10V
  • Power Dissipation (Max): 500mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock181

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PMN70XPEAX
PMN70XPEAX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.2A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 602pF @ 10V
  • Power Dissipation (Max): 500mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock402

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PMN70XPX
PMN70XPX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.1A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 88mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
  • Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock312

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PMN80XP,115
PMN80XP,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 2.5A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 102mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
  • Power Dissipation (Max): 385mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock462

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PMPB100ENEAX
PMPB100ENEAX

Nexperia

Transistors - FETs, MOSFETs - Single

PMPB100ENEA/SOT1220/SOT1220

  • Manufacturer: Nexperia USA Inc.
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock329

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PMPB100ENEX
PMPB100ENEX

Nexperia

Transistors - FETs, MOSFETs - Single

PMPB100ENE/SOT1220/SOT1220

  • Manufacturer: Nexperia USA Inc.
  • Series: *
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock465

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PMPB100XPEAX
PMPB100XPEAX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.2A 6DFN2020MD

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V
  • Rds On (Max) @ Id, Vgs: 122mOhm @ 3.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Vgs (Max): +8V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 388pF @ 10V
  • Power Dissipation (Max): 550mW (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN2020MD (2x2)
  • Package / Case: 6-UDFN Exposed Pad
In Stock141

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PMPB10XNE,115
PMPB10XNE,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 9A 6DFN

  • Manufacturer: Nexperia USA Inc.
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 2175pF @ 10V
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock388

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PMPB10XNEAX
PMPB10XNEAX

Nexperia

Transistors - FETs, MOSFETs - Single

PMPB10XNEA/SOT1220/SOT1220

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101, TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
  • Vgs(th) (Max) @ Id: 0.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 2.175nF @ 10V
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock460

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PMPB10XNEZ
PMPB10XNEZ

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V SOT1220

  • Manufacturer: Nexperia USA Inc.
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 2175pF @ 10V
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock15,938

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PMPB11EN,115
PMPB11EN,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 9A 6DFN

  • Manufacturer: Nexperia USA Inc.
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock23,460

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PMPB12UN,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 7.9A 6DFN

  • Manufacturer: NXP USA Inc.
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 7.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 10V
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN2020MD (2x2)
  • Package / Case: 6-UDFN Exposed Pad
In Stock436

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PMPB12UNEAX
PMPB12UNEAX

Nexperia

Transistors - FETs, MOSFETs - Single

PMPB12UNEA/SOT1220/SOT1220

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101, TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 7.9A, 4.5V
  • Vgs(th) (Max) @ Id: 0.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1.22nF @ 10V
  • Power Dissipation (Max): 1.6W (Ta), 12.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock291

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PMPB12UNEX
PMPB12UNEX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 11.4A 6DFN2020MD

  • Manufacturer: Nexperia USA Inc.
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
  • Power Dissipation (Max): 470mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock4,952

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PMPB13XNE,115
PMPB13XNE,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 8A 6DFN

  • Manufacturer: Nexperia USA Inc.
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 2195pF @ 15V
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock176

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PMPB14XPX
PMPB14XPX

Nexperia

Transistors - FETs, MOSFETs - Single

PMPB14XP/SOT1220/SOT1220

  • Manufacturer: Nexperia USA Inc.
  • Series: *
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock32,151

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PMPB15XN,115
PMPB15XN,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 7.3A 6DFN

  • Manufacturer: Nexperia USA Inc.
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 7.3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.2nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock201

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PMPB15XP,115
PMPB15XP,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 12V 8.2A 6DFN

  • Manufacturer: Nexperia USA Inc.
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 2875pF @ 6V
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock4,711

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