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Transistors

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PH1730AL,115
PH1730AL,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 77.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5057pF @ 12V
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock230

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PH1825AL,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 100A LFPAK

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 12V
  • Power Dissipation (Max): 104W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock421

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PH1875L,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 45.8A LFPAK

  • Manufacturer: NXP USA Inc.
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33.4nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock133

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PH1930AL,115
PH1930AL,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 12V
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock206

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PH1955L,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 40A LFPAK

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 17.3mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1992pF @ 25V
  • Power Dissipation (Max): 75W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock393

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PH20100S,115
PH20100S,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 34.3A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 34.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2264pF @ 25V
  • Power Dissipation (Max): 62.5W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock397

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PH2030AL,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V LFPAK

  • Manufacturer: NXP USA Inc.
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock119

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PH2230DLSX
PH2230DLSX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TRENCH

  • Manufacturer: Nexperia USA Inc.
  • Series: *
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock314

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PH2520U,115
PH2520U,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 100A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 10V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock225

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PH2525L,115
PH2525L,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 100A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34.7nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4470pF @ 12V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock443

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PH2530AL,115
PH2530AL,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3468pF @ 12V
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock126

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PH2625L,115
PH2625L,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 100A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4308pF @ 12V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock259

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PH2925U,115
PH2925U,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 100A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 4.5V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 10V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock270

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PH3030AL,115
PH3030AL,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2822pF @ 12V
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock293

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PH3075L,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 30A LFPAK

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 25V
  • Power Dissipation (Max): 75W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock398

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PH3120L,115
PH3120L,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 100A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.65mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 48.5nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4457pF @ 10V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock308

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PH3230S,115
PH3230S,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock279

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PH3330L,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A LFPAK

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 12V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock200

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PH3430AL,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A LFPAK

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 12V
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock228

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PH3830L,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 98A LFPAK

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3190pF @ 10V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock413

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PH3855L,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 24A LFPAK

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 25V
  • Power Dissipation (Max): 50W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock113

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PH4025L,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 99A LFPAK

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2601pF @ 12V
  • Power Dissipation (Max): 46.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock284

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PH4030AL,115
PH4030AL,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 12V
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock260

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PH4330L,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 95.9A LFPAK

  • Manufacturer: NXP USA Inc.
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 95.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2786pF @ 12V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock218

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PH4530AL,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V LFPAK

  • Manufacturer: NXP USA Inc.
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock389

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PH4530L,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 80A LFPAK

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 10V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
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PH4830L,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 84A LFPAK

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2786pF @ 12V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock318

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PH4840S,115
PH4840S,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 94.5A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 94.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 10V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock117

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PH5030AL,115
PH5030AL,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 91A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 12V
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock204

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PH5330E,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 80A LFPAK

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
In Stock298

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