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Transistors

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IXFT58N20Q TRL

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 58A TO268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 29A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268 (IXFT)
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock442

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IXFT60N25Q
IXFT60N25Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 60A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
  • Power Dissipation (Max): 360W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock181

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IXFT60N50P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 60A TO268

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
  • Power Dissipation (Max): 1040W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock305

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IXFT60N65X2HV

Transistors - FETs, MOSFETs - Single

MOSFET N-CH

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
  • Power Dissipation (Max): 780W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268HV
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock460

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IXFT69N30P
IXFT69N30P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 69A TO-268

  • Manufacturer: IXYS
  • Series: PolarHT™ HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4960pF @ 25V
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock395

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IXFT6N100F
IXFT6N100F

IXYS-RF

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 6A TO268

  • Manufacturer: IXYS-RF
  • Series: HiPerRF™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
  • Power Dissipation (Max): 180W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268 (IXFT)
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock533

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IXFT6N100Q
IXFT6N100Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 6A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Power Dissipation (Max): 180W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock333

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IXFT70N15
IXFT70N15

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 70A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock333

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IXFT70N20Q3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 70A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
  • Power Dissipation (Max): 690W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock275

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IXFT70N30Q3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 70A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4735pF @ 25V
  • Power Dissipation (Max): 830W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock476

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IXFT74N20
IXFT74N20

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 74A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Power Dissipation (Max): 360W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock416

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IXFT74N20Q
IXFT74N20Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO268

  • Manufacturer: IXYS
  • Series: *
In Stock464

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IXFT7N90Q
IXFT7N90Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 7A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Power Dissipation (Max): 180W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock355

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IXFT80N08
IXFT80N08

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 80A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock160

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IXFT80N085
IXFT80N085

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 85V 80A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock228

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IXFT80N10Q
IXFT80N10Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 80A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Power Dissipation (Max): 360W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock378

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IXFT80N15Q
IXFT80N15Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 80A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Power Dissipation (Max): 360W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock287

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IXFT80N20Q
IXFT80N20Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 80A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
  • Power Dissipation (Max): 360W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock428

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IXFT80N30P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 80A TO-268

  • Manufacturer: IXYS
  • Series: *
In Stock158

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IXFT80N65X2HV

Transistors - FETs, MOSFETs - Single

MOSFET N-CH

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 25V
  • Power Dissipation (Max): 890W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268HV
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock107

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IXFT86N30T
IXFT86N30T

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 86A TO268

  • Manufacturer: IXYS
  • Series: HiPerFET™, TrenchT2™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
  • Power Dissipation (Max): 860W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock472

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IXFT88N28P
IXFT88N28P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 280V 88A TO268

  • Manufacturer: IXYS
  • Series: *
In Stock139

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IXFT88N30P
IXFT88N30P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 88A TO268

  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarP2™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
  • Power Dissipation (Max): 600W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock333

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IXFT94N30P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 94A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5510pF @ 25V
  • Power Dissipation (Max): 1040W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock277

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IXFT94N30T
IXFT94N30T

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 94A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™, TrenchT2™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
  • Power Dissipation (Max): 890W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock470

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IXFT96N20P
IXFT96N20P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 96A TO-268

  • Manufacturer: IXYS
  • Series: PolarHT™ HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Power Dissipation (Max): 600W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock311

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IXFT9N80Q
IXFT9N80Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 9A TO-268

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Power Dissipation (Max): 180W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock498

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IXFV110N10P

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 110A PLUS220

  • Manufacturer: IXYS
  • Series: PolarHT™ HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
  • Power Dissipation (Max): 480W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
In Stock162

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IXFV110N10PS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 110A PLUS220-S

  • Manufacturer: IXYS
  • Series: PolarHT™ HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
  • Power Dissipation (Max): 480W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
In Stock367

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IXFV12N120P

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1200V 12A PLUS220

  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarP2™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Power Dissipation (Max): 543W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
In Stock425

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