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Transistors

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Part Number
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IXFP8N50PM
IXFP8N50PM

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 4.4A TO-220

  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarHT™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Power Dissipation (Max): 42W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
In Stock337

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IXFP8N65X2
IXFP8N65X2

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
In Stock240

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IXFP8N85X
IXFP8N85X

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 850V 8A TO220AB

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 25V
  • Power Dissipation (Max): 200W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB (IXFP)
  • Package / Case: TO-220-3
In Stock204

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IXFP8N85XM
IXFP8N85XM

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 25V
  • Power Dissipation (Max): 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Isolated Tab
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
In Stock418

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IXFP90N20X3

Transistors - FETs, MOSFETs - Single

200V/90A ULTRA JUNCTION X3-CLASS

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5420pF @ 25V
  • Power Dissipation (Max): 390W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
In Stock386

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IXFP90N20X3M

Transistors - FETs, MOSFETs - Single

200V/90A ULTRA JUNCTION X3-CLASS

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5420pF @ 25V
  • Power Dissipation (Max): 36W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Isolated Tab
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
In Stock517

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IXFQ10N80P
IXFQ10N80P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 10A TO-3P

  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarHT™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock131

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IXFQ120N25X3

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 250V 120A TO3P

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7870pF @ 25V
  • Power Dissipation (Max): 520W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock575

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IXFQ12N80P
IXFQ12N80P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 12A TO-3P

  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarHT™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • Power Dissipation (Max): 360W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock452

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IXFQ140N20X3

Transistors - FETs, MOSFETs - Single

200V/140A ULTRA JUNCTION X3-CLAS

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 127nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7660pF @ 25V
  • Power Dissipation (Max): 520W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock511

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IXFQ14N80P
IXFQ14N80P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 14A TO-3P

  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarHT™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
  • Power Dissipation (Max): 400W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock258

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IXFQ20N50P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 20A TO-3P

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Power Dissipation (Max): 380W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock397

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IXFQ21N50Q
IXFQ21N50Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 21A TO-3P

  • Manufacturer: IXYS
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock419

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IXFQ22N60P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 22A TO3P

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock390

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IXFQ23N60Q
IXFQ23N60Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 23A TO-268(D3)

  • Manufacturer: IXYS
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
In Stock310

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IXFQ24N50P2

Transistors - FETs, MOSFETs - Single

500V POLAR2 HIPERFETS

  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarP2™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
  • Power Dissipation (Max): 480W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock104

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IXFQ24N50Q
IXFQ24N50Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 24A TO-3P

  • Manufacturer: IXYS
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock205

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IXFQ24N60X
IXFQ24N60X

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 24A TO-3P

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 25V
  • Power Dissipation (Max): 400W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock376

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IXFQ26N50
IXFQ26N50

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 26A TO-30

  • Manufacturer: IXYS
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock175

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IXFQ26N50P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 26A TO-3P

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock412

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IXFQ26N50Q
IXFQ26N50Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 26A TO-3P

  • Manufacturer: IXYS
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock412

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IXFQ28N60P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 28A TO3P

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3560pF @ 25V
  • Power Dissipation (Max): 695W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock441

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IXFQ30N60X
IXFQ30N60X

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 30A TO3P

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 25V
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock474

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IXFQ34N50P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 34A TO-3P

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3260pF @ 25V
  • Power Dissipation (Max): 695W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock535

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IXFQ50N50P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 50A TO-3P

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4335pF @ 25V
  • Power Dissipation (Max): 960W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock540

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IXFQ50N60P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 50A TO3P

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
  • Power Dissipation (Max): 1040W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock442

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IXFQ50N60X
IXFQ50N60X

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 50A TO3P

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 73mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V
  • Power Dissipation (Max): 660W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock440

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IXFQ60N25X3

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 250V 60A TO3P

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V
  • Power Dissipation (Max): 320W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock106

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IXFQ60N50P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 60A TO3P

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
  • Power Dissipation (Max): 1040W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock314

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IXFQ60N60X
IXFQ60N60X

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 60A TO3P

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
  • Power Dissipation (Max): 890W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
In Stock292

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