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Records 64,903

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Part Number	Description	In Stock
IRLHS6242TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 10A PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 10V Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	In Stock221 More on Order
IRLHS6242TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 10A PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 10V Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	In Stock5,232 More on Order
IRLHS6342TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.7A PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1019pF @ 25V Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	In Stock426 More on Order
IRLHS6342TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.7A PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1019pF @ 25V Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	In Stock13,282 More on Order
IRLI2203N Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 61A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock379 More on Order
IRLI2203NPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 61A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock307 More on Order
IRLI2505 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 58A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock143 More on Order
IRLI2910 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 31A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock357 More on Order
IRLI2910PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 31A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock37,226 More on Order
IRLI3705NPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 52A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Power Dissipation (Max): 58W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock1,766 More on Order
IRLI3803 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 76A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock143 More on Order
IRLI3803PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 76A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock439 More on Order
IRLI510ATU ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 5.6A I2PAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 440mOhm @ 2.8A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Power Dissipation (Max): 3.8W (Ta), 37W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock306 More on Order
IRLI520G Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 7.2A TO220FP Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 270mOhm @ 4.3A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Power Dissipation (Max): 37W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock264 More on Order
IRLI520GPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 7.2A TO220FP Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 270mOhm @ 4.3A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Power Dissipation (Max): 37W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock118 More on Order
IRLI520N Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 8.1A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock200 More on Order
IRLI520NPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 8.1A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock7,087 More on Order
IRLI530G Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 9.7A TO220FP Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 160mOhm @ 5.8A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock253 More on Order
IRLI530GPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 9.7A TO220FP Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 160mOhm @ 5.8A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock2,484 More on Order
IRLI530N Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 12A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Power Dissipation (Max): 41W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock233 More on Order
IRLI530NPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 12A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Power Dissipation (Max): 41W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock14,522 More on Order
IRLI540G Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 17A TO220FP Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power Dissipation (Max): 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock215 More on Order
IRLI540GPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 17A TO220FP Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power Dissipation (Max): 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock2,155 More on Order
IRLI540N Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 23A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Power Dissipation (Max): 54W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock387 More on Order
IRLI540NPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 23A TO220FP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Power Dissipation (Max): 54W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	In Stock3,587 More on Order
IRLI610ATU ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 3.3A I2PAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock363 More on Order
IRLI620G Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 4A TO220FP Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock403 More on Order
IRLI620GPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 4A TO220FP Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock137 More on Order
IRLI630G Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 6.2A TO220FP Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 400mOhm @ 3.7A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock311 More on Order
IRLI630GPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 6.2A TO220FP Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 400mOhm @ 3.7A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock2,073 More on Order

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