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Part Number	Description	In Stock
IRL2910STRRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 55A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock370 More on Order
IRL3102 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 61A TO-220AB Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock183 More on Order
IRL3102L Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 61A TO-262 Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock236 More on Order
IRL3102PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 61A TO-220AB Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock223 More on Order
IRL3102S Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 61A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock188 More on Order
IRL3102SPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 61A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock346 More on Order
IRL3102STRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 61A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock281 More on Order
IRL3102STRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 61A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock238 More on Order
IRL3102STRR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 61A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock228 More on Order
IRL3103D1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A TO-220AB Manufacturer: Infineon Technologies Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 2W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock257 More on Order
IRL3103D1PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A TO-220AB Manufacturer: Infineon Technologies Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 2W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock218 More on Order
IRL3103D1S Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK Manufacturer: Infineon Technologies Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock291 More on Order
IRL3103D1SPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK-5 Manufacturer: Infineon Technologies Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock496 More on Order
IRL3103D1STRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK Manufacturer: Infineon Technologies Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock219 More on Order
IRL3103D1STRLP Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK Manufacturer: Infineon Technologies Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock382 More on Order
IRL3103D1STRR Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK Manufacturer: Vishay Siliconix Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock409 More on Order
IRL3103D2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 54A TO-220AB Manufacturer: Infineon Technologies Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Power Dissipation (Max): 2W (Ta), 70W (Tc) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock440 More on Order
IRL3103D2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 54A TO-220AB Manufacturer: Infineon Technologies Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Power Dissipation (Max): 2W (Ta), 70W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock121 More on Order
IRL3103D2S Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 54A D2PAK Manufacturer: Infineon Technologies Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock448 More on Order
IRL3103D2STRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 54A D2PAK Manufacturer: Infineon Technologies Series: FETKY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock420 More on Order
IRL3103L Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock207 More on Order
IRL3103LPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock333 More on Order
IRL3103PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A TO-220AB Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock5,414 More on Order
IRL3103S Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock229 More on Order
IRL3103SPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock413 More on Order
IRL3103STRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock166 More on Order
IRL3103STRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock116 More on Order
IRL3103STRR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock106 More on Order
IRL3103STRRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock249 More on Order
IRL3202L Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 48A TO-262 Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V Power Dissipation (Max): 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock289 More on Order

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