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Part Number	Description	In Stock
IPW60R099CPFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 31A TO-247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V Power Dissipation (Max): 255W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock553 More on Order
IPW60R099P6XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock2,135 More on Order
IPW60R099P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 31A TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 4V @ 530µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1952pF @ 400V Power Dissipation (Max): 117W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock680 More on Order
IPW60R105CFD7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 470µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1752pF @ 400V Power Dissipation (Max): 106W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	In Stock662 More on Order
IPW60R120C7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 19A TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V Power Dissipation (Max): 92W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock451 More on Order
IPW60R120P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 26A TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 4V @ 410µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1544pF @ 400V Power Dissipation (Max): 95W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock498 More on Order
IPW60R125C6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 100V Power Dissipation (Max): 219W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock1,055 More on Order
IPW60R125CFD7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4.5V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1503pF @ 400V Power Dissipation (Max): 92W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock659 More on Order
IPW60R125CPFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock259 More on Order
IPW60R125P6XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V Power Dissipation (Max): 219W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock392 More on Order
IPW60R145CFD7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW Manufacturer: Infineon Technologies	In Stock432 More on Order
IPW60R160C6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 23.8A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V Power Dissipation (Max): 176W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock457 More on Order
IPW60R160P6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 100V Power Dissipation (Max): 176W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock376 More on Order
IPW60R165CPFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO-247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V Power Dissipation (Max): 192W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock445 More on Order
IPW60R170CFD7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ CFD7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1199pF @ 400V Power Dissipation (Max): 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock957 More on Order
IPW60R180C7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13A TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 4V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock371 More on Order
IPW60R180P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 18A TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 4V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V Power Dissipation (Max): 72W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock636 More on Order
IPW60R190C6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20.2A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V Power Dissipation (Max): 151W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock549 More on Order
IPW60R190E6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20.2A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V Power Dissipation (Max): 151W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock1,348 More on Order
IPW60R190P6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20.2A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 630µ Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V Power Dissipation (Max): 151W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock662 More on Order
IPW60R199CPFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 16A TO-247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V Vgs(th) (Max) @ Id: 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V Power Dissipation (Max): 139W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock208 More on Order
IPW60R230P6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 530µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V Power Dissipation (Max): 126W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock491 More on Order
IPW60R250CP Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 12A TO-247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock263 More on Order
IPW60R280C6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13.8A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock572 More on Order
IPW60R280E6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13.8A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock493 More on Order
IPW60R280P6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock272 More on Order
IPW60R299CPFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO-247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Power Dissipation (Max): 96W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock335 More on Order
IPW60R330P6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 12A TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 370µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 100V Power Dissipation (Max): 93W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock271 More on Order
IPW65R019C7FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 75A TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V Vgs(th) (Max) @ Id: 4V @ 2.92mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 400V Power Dissipation (Max): 446W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock450 More on Order
IPW65R037C6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 83.2A TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ C6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 83.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 37mOhm @ 33.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 100V Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock422 More on Order

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