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Transistors

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IPD60R2K1CEBTMA1
IPD60R2K1CEBTMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V TO-252-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CE
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
  • Power Dissipation (Max): 22W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock262

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IPD60R360P7ATMA1
IPD60R360P7ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 9A TO252-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V
  • Power Dissipation (Max): 41W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock190

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IPD60R360P7SAUMA1
IPD60R360P7SAUMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9A TO252-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V
  • Power Dissipation (Max): 41W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock454

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IPD60R360P7SE8228AUMA1
IPD60R360P7SE8228AUMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

CONSUMER

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V
  • Power Dissipation (Max): 41W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock296

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IPD60R380C6
IPD60R380C6

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 10.6A TO252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock474

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IPD60R380C6ATMA1
IPD60R380C6ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 10.6A TO252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ C6
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock49,766

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IPD60R380E6ATMA2
IPD60R380E6ATMA2

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET NCH 600V 10.6A TO252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock186

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IPD60R380E6BTMA1
IPD60R380E6BTMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET NCH 600V 10.6A TO252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 155°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock128

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IPD60R380P6ATMA1
IPD60R380P6ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V DPAK-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P6
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 100V
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock229

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IPD60R380P6BTMA1
IPD60R380P6BTMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 3TO252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P6
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 100V
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock461

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IPD60R385CPATMA1
IPD60R385CPATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9A TO-252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CP
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock366

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IPD60R385CPBTMA1
IPD60R385CPBTMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 9A TO-252

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock207

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IPD60R3K3C6
IPD60R3K3C6

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 1.7A TO252-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.3Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 100V
  • Power Dissipation (Max): 18.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock235

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IPD60R3K3C6ATMA1
IPD60R3K3C6ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 1.7A TO252-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ C6
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.3Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 100V
  • Power Dissipation (Max): 18.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock4,380

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IPD60R3K4CEAUMA1
IPD60R3K4CEAUMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 2.6A TO252-3

  • Manufacturer: Infineon Technologies
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 100V
  • Power Dissipation (Max): 29W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock455

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IPD60R400CEATMA1
IPD60R400CEATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V TO-252-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CE
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock476

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IPD60R400CEAUMA1
IPD60R400CEAUMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

CONSUMER

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CE
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
  • Power Dissipation (Max): 112W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock303

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IPD60R450E6ATMA1
IPD60R450E6ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9.2A TO252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ E6
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
  • Power Dissipation (Max): 74W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock310

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IPD60R450E6BTMA1
IPD60R450E6BTMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9.2A TO252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
  • Power Dissipation (Max): 74W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock330

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IPD60R460CEATMA1
IPD60R460CEATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V TO-252-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CE
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 460mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
  • Power Dissipation (Max): 74W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock496

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IPD60R460CEAUMA1
IPD60R460CEAUMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

CONSUMER

  • Manufacturer: Infineon Technologies
  • Series: *
In Stock154

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IPD60R520C6ATMA1
IPD60R520C6ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 8.1A TO252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ C6
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 100V
  • Power Dissipation (Max): 66W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock485

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IPD60R520C6BTMA1
IPD60R520C6BTMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 8.1A TO252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 100V
  • Power Dissipation (Max): 66W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock198

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IPD60R520CPATMA1
IPD60R520CPATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 6.8A TO-252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
  • Power Dissipation (Max): 66W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock163

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IPD60R520CPBTMA1
IPD60R520CPBTMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 6.8A TO-252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
  • Power Dissipation (Max): 66W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock416

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IPD60R600C6ATMA1
IPD60R600C6ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 7.3A TO252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ C6
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Power Dissipation (Max): 63W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock4,344

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IPD60R600C6BTMA1
IPD60R600C6BTMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 7.3A TO252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Power Dissipation (Max): 63W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock391

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IPD60R600CPATMA1
IPD60R600CPATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 6.1A TO-252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 220µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V
  • Power Dissipation (Max): 60W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock345

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IPD60R600CPBTMA1
IPD60R600CPBTMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 6.1A TO-252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 220µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V
  • Power Dissipation (Max): 60W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock122

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IPD60R600E6
IPD60R600E6

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 7.3A TO252

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Power Dissipation (Max): 63W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,391

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