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Part Number	Description	In Stock
IPD135N08N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 45A Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 3.5V @ 33µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 40V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock287 More on Order
IPD135N08N3GBTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 45A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 3.5V @ 33µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 40V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock361 More on Order
IPD13N03LA G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 30A DPAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 15V Power Dissipation (Max): 46W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock485 More on Order
IPD144N06NGBTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 50A TO-252 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 30V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock357 More on Order
IPD14N06S280ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 17A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 293pF @ 25V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock206 More on Order
IPD14N06S280ATMA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 17A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 293pF @ 25V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock150 More on Order
IPD15N06S2L64ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 19A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 64mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 354pF @ 25V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock113 More on Order
IPD15N06S2L64ATMA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single N-CHANNEL_55/60V Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 64mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 354pF @ 25V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,336 More on Order
IPD160N04LGBTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 30A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock150 More on Order
IPD16CN10N G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 53A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock469 More on Order
IPD16CNE8N G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 53A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 40V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock425 More on Order
IPD170N04NGBTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 30A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock253 More on Order
IPD180N10N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MV POWER MOS Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 3.5V @ 33µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock267 More on Order
IPD180N10N3GBTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 43A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 3.5V @ 33µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock309 More on Order
IPD200N15N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 50A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock9,905 More on Order
IPD200N15N3GBTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 50A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock481 More on Order
IPD20N03L Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 30A DPAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock228 More on Order
IPD20N03L G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 30A DPAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 695pF @ 25V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock223 More on Order
IPD220N06L3GBTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 30V Power Dissipation (Max): 36W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock10,270 More on Order
IPD22N08S2L50ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 27A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 31µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V Power Dissipation (Max): 75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock131 More on Order
IPD230N06NGBTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A DPAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock346 More on Order
IPD250N06N3GBTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 28A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 4V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V Power Dissipation (Max): 36W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock413 More on Order
IPD25CN10NGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 35A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 39µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,029 More on Order
IPD25CN10NGBUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 35A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 39µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock300 More on Order
IPD25CNE8N G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 35A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 39µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock440 More on Order
IPD25DP06LMATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock278 More on Order
IPD25DP06LMSAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock177 More on Order
IPD25DP06NMATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock349 More on Order
IPD25N06S240ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 29A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock153 More on Order
IPD25N06S240ATMA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 29A TO252-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock250 More on Order

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