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| Part Number | SCTW90N65G2V |
| OEMstron Part # | SCTW90N65G2V |
| Manufacturer | STMicroelectronics |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | SILICON CARBIDE POWER MOSFET 650 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SCTW90N65G2V PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SCTW90N65G2V Specifications
| Part Number | SCTW90N65G2V | |
| Brand | STMicroelectronics | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | STMicroelectronics | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A, 18V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 157nC @ 18V | |
| Vgs (Max) | +22V, -10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 400V | |
| FET Feature | - | |
| Power Dissipation (Max) | 390W (Tc) | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | HiP247™ | |
| Package / Case | TO-247-3 |
SCTW90N65G2V Documents
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| In Stock | 361 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 40.6760 | $ 40.6760 |
| 100 | $ 40.6760 | $ 4,067.6000 |
| 500 | $ 40.6760 | $ 20,338.0000 |
| 1000 | $ 40.6760 | $ 40,676.0000 |
| 2500 | $ 40.6760 | $ 101,690.0000 |
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