Semiconductors
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| Datasheet | SCTW90N65G2V |
| File Size | 397.46 KB |
| Total Pages | 12 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SCTW90N65G2V |
| Description | SILICON CARBIDE POWER MOSFET 650 |
SCTW90N65G2V - STMicroelectronics
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URL Link
www.oemstron.com/datasheet/SCTW90N65G2V
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Manufacturer STMicroelectronics Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 25mOhm @ 50A, 18V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 157nC @ 18V Vgs (Max) +22V, -10V Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 400V FET Feature - Power Dissipation (Max) 390W (Tc) Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Supplier Device Package HiP247™ Package / Case TO-247-3 |