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| Part Number | MVB50P03HDLT4G |
| OEMstron Part # | MVB50P03HDLT4G |
| Manufacturer | ON Semiconductor |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | INTEGRATED CIRCUIT |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | MVB50P03HDLT4G PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
MVB50P03HDLT4G Specifications
| Part Number | MVB50P03HDLT4G | |
| Brand | ON Semiconductor | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Series | Automotive, AEC-Q101 | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 5V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 5V | |
| Vgs (Max) | ±15V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4.9nF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 125W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK-3 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
MVB50P03HDLT4G Documents
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