Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

MVB50P03HDLT4G Datasheet

MVB50P03HDLT4G Cover
DatasheetMVB50P03HDLT4G
File Size138.11 KB
Total Pages9
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts MVB50P03HDLT4G
Description INTEGRATED CIRCUIT

MVB50P03HDLT4G - ON Semiconductor

MVB50P03HDLT4G Datasheet Page 1
MVB50P03HDLT4G Datasheet Page 2
MVB50P03HDLT4G Datasheet Page 3
MVB50P03HDLT4G Datasheet Page 4
MVB50P03HDLT4G Datasheet Page 5
MVB50P03HDLT4G Datasheet Page 6
MVB50P03HDLT4G Datasheet Page 7
MVB50P03HDLT4G Datasheet Page 8
MVB50P03HDLT4G Datasheet Page 9

The Products You May Be Interested In

MVB50P03HDLT4G MVB50P03HDLT4G ON Semiconductor INTEGRATED CIRCUIT 433

More on Order

URL Link

MVB50P03HDLT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

25mOhm @ 25A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

4.9nF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-3

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB