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| Part Number | SSM3J35MFV,L3F |
| OEMstron Part # | SSM3J35MFV-L3F |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 20V 0.1A VESM |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SSM3J35MFV,L3F PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SSM3J35MFV Specifications
| Part Number | SSM3J35MFV,L3F | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 50mA, 4V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 12.2pF @ 3V | |
| FET Feature | - | |
| Power Dissipation (Max) | 150mW (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | VESM | |
| Package / Case | SOT-723 |
SSM3J35MFV,L3F Documents
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| Part Number | Description | Stock |
|
SSM3J35MFV,L3F Toshiba America Electronic Components |
P-Channel -20V 100mA 8ohms @ 50mA,4V 150mW SOT-723 MOSFET RoHS |
29 |
| Part Number | Description | Stock |
|
SSM3J35MFV,L3F D# SSM3J35MFVL3FCT-ND Toshiba America Electronic Components |
MOSFET P-CH 20V 100MA VESM |
7859 In Stock |
| Part Number | Description | Stock |
|
SSM3J35MFVL3F Toshiba America Electronic Components |
OEM/CM ONLY |
10868 |
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