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IGBTs - Single

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CategorySemiconductors / Transistors / IGBTs - Single
Records 3,305
Page 107/111
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
NGTB75N60SWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 75A 600V TO-247
In Stock183

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: 595W
Switching Energy: 1.5mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 310nC
Td (on/off) @ 25°C: 110ns/270ns
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): 80ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
IRGS4640DTRLPBF
Infineon Technologies

Transistors - IGBTs - Single

DIODE 600V 40A D2PAK
In Stock409

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 65A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Power - Max: 250W
Switching Energy: 115µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: 41ns/104ns
Test Condition: 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 89ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
IRGS4640DTRRPBF
Infineon Technologies

Transistors - IGBTs - Single

DIODE 600V 24A D2PAK
In Stock271

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 65A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Power - Max: 250W
Switching Energy: 115µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: 41ns/104ns
Test Condition: 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 89ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
AUIRGF76524D0
Infineon Technologies

Transistors - IGBTs - Single

DIODE IGBT 680V 24A TO-247AD
In Stock111

More on Order
Series: *
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
AUIRGU4045D
Infineon Technologies

Transistors - IGBTs - Single

DIODE 600V IGBT
In Stock496

More on Order
Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 12A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Power - Max: 77W
Switching Energy: 56µJ (on), 122µJ (off)
Input Type: Standard
Gate Charge: 19.5nC
Td (on/off) @ 25°C: 27ns/75ns
Test Condition: 400V, 6A, 47Ohm, 15V
Reverse Recovery Time (trr): 74ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
IRG8B08N120KDPBF
Infineon Technologies

Transistors - IGBTs - Single

DIODE 1200V 8A TO-220
In Stock315

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 15A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Power - Max: 89W
Switching Energy: 300µJ (on), 300µJ (off)
Input Type: Standard
Gate Charge: 45nC
Td (on/off) @ 25°C: 20ns/160ns
Test Condition: 600V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
IRGB4640DPBF
Infineon Technologies

Transistors - IGBTs - Single

DIODE 600V 40A TO-220
In Stock149

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 65A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Power - Max: 250W
Switching Energy: 115µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: 41ns/104ns
Test Condition: 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 89ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AC
IRGS4640DPBF
Infineon Technologies

Transistors - IGBTs - Single

DIODE 600V 40A D2PAK
In Stock376

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 65A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Power - Max: 250W
Switching Energy: 115µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: 41ns/104ns
Test Condition: 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 89ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
IRGSL4640DPBF
Infineon Technologies

Transistors - IGBTs - Single

DIODE 600V 24A COPAK-262
In Stock402

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 65A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Power - Max: 250W
Switching Energy: 115µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: 41ns/104ns
Test Condition: 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 89ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
STGWT60V60DLF
STMicroelectronics

Transistors - IGBTs - Single

IGBT BIPO 600V 60A TO3P
In Stock476

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
RJH1BG7RDPK-00#T0
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 1100V 60A 250W TO247
In Stock448

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
RJH60A01RDPD-A0#J2
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 5A
In Stock489

More on Order
Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 5A
Power - Max: 29.4W
Switching Energy: 130µJ (on), 70µJ (off)
Input Type: Standard
Gate Charge: 11nC
Td (on/off) @ 25°C: 30ns/40ns
Test Condition: 300V, 5A, 5Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
RJH60A81RDPD-A0#J2
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 5A
In Stock495

More on Order
Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A
Power - Max: 29.4W
Switching Energy: 130µJ (on), 60µJ (off)
Input Type: Standard
Gate Charge: 11nC
Td (on/off) @ 25°C: 30ns/40ns
Test Condition: 300V, 5A, 5Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
RJH60A83RDPD-A0#J2
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 10A
In Stock378

More on Order
Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
Power - Max: 51W
Switching Energy: 230µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 19.7nC
Td (on/off) @ 25°C: 31ns/54ns
Test Condition: 300V, 10A, 5Ohm, 15V
Reverse Recovery Time (trr): 130ns
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
RJH60D1DPP-E0#T2
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 10A
In Stock452

More on Order
Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Power - Max: 30W
Switching Energy: 100µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 13nC
Td (on/off) @ 25°C: 30ns/42ns
Test Condition: 300V, 10A, 5Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
RJH65D27BDPQ-A0#T0
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 650V
In Stock370

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
RJP4009ANS-01#Q6
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 400V
In Stock275

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 9V @ 2.5V, 150A
Power - Max: 1.8W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN
Supplier Device Package: 8-VSON (3x4.4)
RJP4301APP-M0#T2
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 430V TO200FL
In Stock482

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 430V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 10V @ 26V, 200A
Power - Max: 30W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 50ns/100ns
Test Condition: 300V, 200A, 30Ohm, 26V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FL
IRG7CH11K10EF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V DIE
In Stock171

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
IRG7CH20K10EF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V DIE
In Stock446

More on Order
Series: *
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
IRG7CH23K10EF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V DIE
In Stock420

More on Order
Series: *
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
IRG7CH28UED
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V ULTRA FAST DIE
In Stock156

More on Order
Series: *
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
IRG7CH28UEF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V ULTRA FAST DIE
In Stock318

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: 60nC
Td (on/off) @ 25°C: 35ns/225ns
Test Condition: 600V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
IRG7CH35UED
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V ULTRA FAST DIE
In Stock173

More on Order
Series: *
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
IRG7CH35UEF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V ULTRA FAST DIE
In Stock204

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 5A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: 85nC
Td (on/off) @ 25°C: 30ns/160ns
Test Condition: 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
IRG7CH42UED
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V ULTRA FAST DIE
In Stock216

More on Order
Series: *
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
IRG7CH42UEF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V ULTRA FAST DIE
In Stock152

More on Order
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 5A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: 157nC
Td (on/off) @ 25°C: 25ns/229ns
Test Condition: 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
IRG7CH46UED
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V ULTRA FAST DIE
In Stock245

More on Order
Series: *
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
IRG7CH46UEF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V ULTRA FAST DIE
In Stock468

More on Order
Series: *
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
IRG7CH50UED
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V ULTRA FAST DIE
In Stock106

More on Order
Series: *
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -