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IGBTs - Single

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CategorySemiconductors / Transistors / IGBTs - Single
Records 3,305
Page 106/111
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8P08N120KD-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 15A 89W TO-247AD

In Stock304

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 15A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Power - Max: 89W
Switching Energy: 300µJ (on), 300µJ (off)
Input Type: Standard
Gate Charge: 45nC
Td (on/off) @ 25°C: 20ns/160ns
Test Condition: 600V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRG8P15N120KD-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 30A 125W TO-247AD

In Stock127

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Power - Max: 125W
Switching Energy: 600µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 98nC
Td (on/off) @ 25°C: 15ns/170ns
Test Condition: 600V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr): 60ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRG8P25N120KD-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 40A 180W TO-247AD

In Stock112

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Power - Max: 180W
Switching Energy: 800µJ (on), 900µJ (off)
Input Type: Standard
Gate Charge: 135nC
Td (on/off) @ 25°C: 20ns/170ns
Test Condition: 600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRG8P40N120KD-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 60A 305W TO-247AD

In Stock400

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Power - Max: 305W
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Input Type: Standard
Gate Charge: 240nC
Td (on/off) @ 25°C: 40ns/245ns
Test Condition: 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr): 80ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRG8P50N120KD-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 80A 305W TO-247AD

In Stock158

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 105A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Power - Max: 350W
Switching Energy: 2.3mJ (on), 1.9mJ (off)
Input Type: Standard
Gate Charge: 315nC
Td (on/off) @ 25°C: 35ns/190ns
Test Condition: 600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRG8P60N120KD-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 100A 420W TO-247AD

In Stock158

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: 420W
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Input Type: Standard
Gate Charge: 345nC
Td (on/off) @ 25°C: 40ns/240ns
Test Condition: 600V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr): 210ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
STGB30H60DF
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 60A 260W D2PAK

In Stock200

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Power - Max: 260W
Switching Energy: 350µJ (on), 400µJ (off)
Input Type: Standard
Gate Charge: 105nC
Td (on/off) @ 25°C: 50ns/160ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 110ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
IRGB4715DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-220AB

In Stock456

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 21A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Power - Max: 100W
Switching Energy: 200µJ (on), 90µJ (off)
Input Type: Standard
Gate Charge: 30nC
Td (on/off) @ 25°C: 30ns/100ns
Test Condition: 400V, 8A, 50Ohm, 15V
Reverse Recovery Time (trr): 86ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
IRGP4740D-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-247

In Stock412

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 24A
Power - Max: 250W
Switching Energy: 520µJ (on), 240µJ (off)
Input Type: Standard
Gate Charge: 70nC
Td (on/off) @ 25°C: 24ns/73ns
Test Condition: 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRGP4740DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-247

In Stock393

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 24A
Power - Max: 250W
Switching Energy: 520µJ (on), 240µJ (off)
Input Type: Standard
Gate Charge: 70nC
Td (on/off) @ 25°C: 24ns/73ns
Test Condition: 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRGP4750DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-247

In Stock169

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 105A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Power - Max: 273W
Switching Energy: 1.3mJ (on), 500µJ (off)
Input Type: Standard
Gate Charge: 105nC
Td (on/off) @ 25°C: 50ns/105ns
Test Condition: 400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr): 150ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
IRGP4760D-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-247

In Stock490

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 144A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Power - Max: 325W
Switching Energy: 1.7mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 70ns/140ns
Test Condition: 400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRGP4760DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-247

In Stock346

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 144A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Power - Max: 325W
Switching Energy: 1.7mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 70ns/140ns
Test Condition: 400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
IRGP4760-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-247

In Stock320

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 144A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Power - Max: 325W
Switching Energy: 1.7mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 70ns/140ns
Test Condition: 400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRGP4760PBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-247

In Stock356

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 144A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Power - Max: 325W
Switching Energy: 1.7mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 70ns/140ns
Test Condition: 400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
IRGP4790D-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-247

In Stock478

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: 455W
Switching Energy: 2.5mJ (on), 2.2mJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRGP4790DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-247

In Stock464

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: 455W
Switching Energy: 2.5mJ (on), 2.2mJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
IRGP4790-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-247

In Stock336

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: 455W
Switching Energy: 2.5mJ (on), 2.2mJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRGP4790PBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-247

In Stock105

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: 455W
Switching Energy: 2.5mJ (on), 2.2mJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
IRGS4715DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V D2-PAK

In Stock353

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 21A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Power - Max: 100W
Switching Energy: 200µJ (on), 90µJ (off)
Input Type: Standard
Gate Charge: 30nC
Td (on/off) @ 25°C: 30ns/100ns
Test Condition: 400V, 8A, 50Ohm, 15V
Reverse Recovery Time (trr): 86ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
IRGS4715DTRLPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V D2-PAK

In Stock208

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 21A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Power - Max: 100W
Switching Energy: 200µJ (on), 90µJ (off)
Input Type: Standard
Gate Charge: 30nC
Td (on/off) @ 25°C: 30ns/100ns
Test Condition: 400V, 8A, 50Ohm, 15V
Reverse Recovery Time (trr): 86ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
IRGS4715DTRRPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V D2-PAK

In Stock367

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 21A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Power - Max: 100W
Switching Energy: 200µJ (on), 90µJ (off)
Input Type: Standard
Gate Charge: 30nC
Td (on/off) @ 25°C: 30ns/100ns
Test Condition: 400V, 8A, 50Ohm, 15V
Reverse Recovery Time (trr): 86ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
NGTB15N120IHTG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 15A BIPOLAR TO247

In Stock202

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
NGTB50N60FL2WG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 50A TO247

In Stock479

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 417W
Switching Energy: 1.5mJ (on), 460µJ (off)
Input Type: Standard
Gate Charge: 220nC
Td (on/off) @ 25°C: 100ns/237ns
Test Condition: 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): 94ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
NGTB15N120IHWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 15A 1200V TO-247

In Stock439

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
Power - Max: 278W
Switching Energy: 360µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: -/130ns
Test Condition: 600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
NGTB20N120IHWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 20A 1200V TO-247

In Stock162

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A
Power - Max: 341W
Switching Energy: 480µJ (off)
Input Type: Standard
Gate Charge: 150nC
Td (on/off) @ 25°C: -/170ns
Test Condition: 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
NGTB25N120SWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 25A 1200V TO-247

In Stock464

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Power - Max: 385W
Switching Energy: 1.95mJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 178nC
Td (on/off) @ 25°C: 87ns/179ns
Test Condition: 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr): 154ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
NGTB40N120SWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 40A 1200V TO-247

In Stock108

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 535W
Switching Energy: 3.4mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 313nC
Td (on/off) @ 25°C: 116ns/286ns
Test Condition: 600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr): 240ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
NGTB45N60S1WG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 45A 600V TO-247

In Stock212

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
Power - Max: 300W
Switching Energy: 1.25mJ (on), 530µJ (off)
Input Type: Standard
Gate Charge: 125nC
Td (on/off) @ 25°C: 72ns/132ns
Test Condition: 400V, 45A, 10Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
NGTB50N60S1WG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 50A 600V TO-247

In Stock465

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 417W
Switching Energy: 1.5mJ (on), 460µJ (off)
Input Type: Standard
Gate Charge: 220nC
Td (on/off) @ 25°C: 100ns/237ns
Test Condition: 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): 94ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3