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| Part Number | TPN2R805PL,L1Q |
| OEMstron Part # | TPN2R805PL-L1Q |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | X35 PB-F POWER MOSFET TRANSISTOR |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | TPN2R805PL,L1Q PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
TPN2R805PL Specifications
| Part Number | TPN2R805PL,L1Q | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSIX-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 45V | |
| Current - Continuous Drain (Id) @ 25°C | 139A (Ta), 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 40A, 10V | |
| Vgs(th) (Max) @ Id | 2.4V @ 300µA | |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3.2nF @ 22.5V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.67W (Ta), 104W (Tc) | |
| Operating Temperature | 175°C | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) | |
| Package / Case | 8-PowerVDFN |
TPN2R805PL,L1Q Documents
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