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For Reference Only
| Part Number | TPH3208PD |
| OEMstron Part # | TPH3208PD |
| Manufacturer | Transphorm |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | GANFET N-CH 650V 20A TO220 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | TPH3208PD PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 15 - May 20 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
TPH3208PD Specifications
| Part Number | TPH3208PD | |
| Brand | Transphorm | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Transphorm | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13A, 8V | |
| Vgs(th) (Max) @ Id | 2.6V @ 300µA | |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 8V | |
| Vgs (Max) | ±18V | |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 400V | |
| FET Feature | - | |
| Power Dissipation (Max) | 96W (Tc) | |
| Operating Temperature | -55°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
TPH3208PD Documents
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| Minimum | 1 |
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