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TPC8A06-H(TE12LQM)

TPC8A06-H(TE12LQM)
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Part Number TPC8A06-H(TE12LQM)
OEMstron Part # TPC8A06-H-TE12LQM
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 12A 8SOP
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models TPC8A06-H(TE12LQM) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TPC8A06-H(TE12LQM) Specifications

Part Number TPC8A06-H(TE12LQM)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.1mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 10V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) -
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package 8-SOP (5.5x6.0)
Package / Case 8-SOIC (0.173", 4.40mm Width)

TPC8A06-H(TE12LQM) Documents

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Part Number Description Stock

TPC8A06-H(TE12LQM)

Toshiba America Electronic Components

MOSFET N-CH SBD 30V 12A 8SOP

Contact Us
Part Number Description Stock

TPC8A06-H(TE12LQM)

D# TPC8A06-H(TE12LQM)-ND

Toshiba America Electronic Components

MOSFET N-CH 30V 12A 8SOP

Limited Supply - Call
Part Number Description Stock

TPC8A06-H(TE12LQM)

D# NS-TPC8A06-H(TE12LQM)

Toshiba Semiconductor and Storage

OEM/CM ONLY

5760

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