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| Part Number | TPC6109-H(TE85L,FM |
| OEMstron Part # | TPC6109-H-TE85L-FM |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 30V 5A VS-6 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | TPC6109-H(TE85L,FM PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 10 - May 15 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
TPC6109-H(TE85L Specifications
| Part Number | TPC6109-H(TE85L,FM | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSIII-H | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 2.5A, 10V | |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA | |
| Gate Charge (Qg) (Max) @ Vgs | 12.3nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 700mW (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | VS-6 (2.9x2.8) | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
TPC6109-H(TE85L,FM Documents
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| Part Number | Description | Stock |
|
TPC6109-H(TE85L,FM D# TPC6109-H(TE85LFMTR-ND Toshiba America Electronic Components |
MOSFET P-CH 30V 5A VS-6 |
Limited Supply - Call |
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