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For Reference Only
| Part Number | TP65H050WS |
| OEMstron Part # | TP65H050WS |
| Manufacturer | Transphorm |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | GANFET N-CH 650V 34A TO247-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | TP65H050WS PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
TP65H050WS Specifications
| Part Number | TP65H050WS | |
| Brand | Transphorm | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Transphorm | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 12V | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V | |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA | |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 400V | |
| FET Feature | - | |
| Power Dissipation (Max) | 119W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-3 | |
| Package / Case | TO-247-3 |
TP65H050WS Documents
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