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| Part Number | TK160F10N1L,LQ |
| OEMstron Part # | TK160F10N1L-LQ |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | X35 PB-F POWER MOSFET TRANSISTOR |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | TK160F10N1L,LQ PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
TK160F10N1L Specifications
| Part Number | TK160F10N1L,LQ | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSVIII-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 160A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 122nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 10100pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 375W (Tc) | |
| Operating Temperature | 175°C | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-220SM(W) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TK160F10N1L,LQ Documents
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