Name: SIRA01DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIRA01DP-T1-GE3
Rating: 5 (117 reviews)

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Part Number	SIRA01DP-T1-GE3
OEMstron Part #	SIRA01DP-T1-GE3
Manufacturer	Vishay Siliconix
Category	Semiconductors › Transistors › FETs, MOSFETs - Single
Description	MOSFET P-CH 30V POWERPAK SO-8
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SIRA01DP-T1-GE3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	May 8 - May 13 (Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

Part Number	SIRA01DP-T1-GE3
Brand	Vishay Siliconix
Lifecycle	Active
RoHS	No RoHS Information
Product Line	Semiconductors
Category	Transistors
Subcategory	FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	26A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	112nC @ 10V
Vgs (Max)	+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds	3490pF @ 15V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA01DP-T1-GE3 Specifications