Name: SIR186DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR186DP-T1-RE3
Rating: 5 (109 reviews)

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Part Number	SIR186DP-T1-RE3
OEMstron Part #	SIR186DP-T1-RE3
Manufacturer	Vishay Siliconix
Category	Semiconductors › Transistors › FETs, MOSFETs - Single
Description	MOSFET N-CH 60V 60A POWERPAKSO-8
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SIR186DP-T1-RE3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	May 10 - May 15 (Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

Part Number	SIR186DP-T1-RE3
Brand	Vishay Siliconix
Lifecycle	Active
RoHS	No RoHS Information
Product Line	Semiconductors
Category	Transistors
Subcategory	FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 30V
FET Feature	-
Power Dissipation (Max)	57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR186DP-T1-RE3 Specifications