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SIHP6N80E-GE3

SIHP6N80E-GE3
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For Reference Only

Part Number SIHP6N80E-GE3
OEMstron Part # SIHP6N80E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CHAN 800V TO-220AB
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHP6N80E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIHP6N80E-GE3 Specifications

Part Number SIHP6N80E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series E
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 827pF @ 100V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

SIHP6N80E-GE3 Documents

SIHP6N80E-GE3, SIHP6N80E-GE3 Datasheet (Total Pages: 7, Size: 127.3 KB)
SIHP6N80E-GE3 Datasheet CoverSIHP6N80E-GE3 Datasheet Page 2SIHP6N80E-GE3 Datasheet Page 3SIHP6N80E-GE3 Datasheet Page 4SIHP6N80E-GE3 Datasheet Page 5SIHP6N80E-GE3 Datasheet Page 6SIHP6N80E-GE3 Datasheet Page 7
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