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SIHP12N50C-E3

SIHP12N50C-E3
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For Reference Only

Part Number SIHP12N50C-E3
OEMstron Part # SIHP12N50C-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 500V 12A TO-220AB
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHP12N50C-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIHP12N50C-E3 Specifications

Part Number SIHP12N50C-E3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 555mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1375pF @ 25V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package -
Package / Case TO-220-3

SIHP12N50C-E3 Documents

SIHP12N50C-E3, SIHP12N50C-E3 Datasheet (Total Pages: 10, Size: 322.77 KB)
SIHB12N50C-E3 Datasheet CoverSIHB12N50C-E3 Datasheet Page 2SIHB12N50C-E3 Datasheet Page 3SIHB12N50C-E3 Datasheet Page 4SIHB12N50C-E3 Datasheet Page 5SIHB12N50C-E3 Datasheet Page 6SIHB12N50C-E3 Datasheet Page 7SIHB12N50C-E3 Datasheet Page 8SIHB12N50C-E3 Datasheet Page 9SIHB12N50C-E3 Datasheet Page 10
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