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For Reference Only
| Part Number | SIHJ8N60E-T1-GE3 |
| OEMstron Part # | SIHJ8N60E-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 600V POWERPAK SO-8L |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SIHJ8N60E-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SIHJ8N60E-T1-GE3 Specifications
| Part Number | SIHJ8N60E-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 754pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 89W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SO-8 | |
| Package / Case | PowerPAK® SO-8 |
SIHJ8N60E-T1-GE3 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
SIHJ8N60E-T1-GE3 D# V36:1790_14140853 Vishay Intertechnologies |
Trans MOSFET N-CH 600V 8A 5-Pin(4+Tab) PowerPAK SO T/R RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
SIHJ8N60E-T1-GE3 D# SIHJ8N60E-T1-GE3 Vishay Intertechnologies |
Trans MOSFET N-CH 600V 8A 5-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIHJ8N60E-T1-GE3) |
Americas - 3000 |
| Part Number | Description | Stock |
|
SIHJ8N60E-T1-GE3 D# SIHJ8N60E-T1-GE3 Vishay Intertechnologies |
Trans MOSFET N-CH 600V 8A 5-Pin PowerPAK SO T/R (Alt: SIHJ8N60E-T1-GE3) |
Europe - 0 |
| Part Number | Description | Stock |
|
SIHJ8N60E-T1-GE3 Vishay Intertechnologies |
2680 |
| Part Number | Description | Stock |
|
SIHJ8N60ET1GE3 Vishay Intertechnologies |
Power Field-Effect Transistor RoHS: Compliant
|
Europe - 3000 |
| Part Number | Description | Stock |
|
SIHJ8N60E-T1-GE3 D# SIHJ8N60E-T1-GE3CT-ND Vishay Siliconix |
MOSFET N-CH 600V 8A PPAK SO-8 |
2990 In Stock |
| Part Number | Description | Stock |
|
SIHJ8N60E-T1-GE3 D# 2630944RL Vishay Intertechnologies |
MOSFET, N-CH, 600V, 8A, POWERPAKSO RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
| Part Number | Description | Stock |
|
SIHJ8N60E-T1-GE3 Vishay Intertechnologies |
RoHS: Compliant
pbFree: Yes
|
0 |
| Part Number | Description | Stock |
|
SIHJ8N60ET1GE3 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
3570 |
| Part Number | Description | Stock |
|
SIHJ8N60E-T1-GE3 D# 78-SIHJ8N60E-T1-GE3 Vishay Intertechnologies |
MOSFET 600V Vds 30V Vgs PowerPAK SO-8L RoHS: Compliant
|
2800 |
| Part Number | Description | Stock |
|
SIHJ8N60E-T1-GE3 D# 01AC4967 Vishay Intertechnologies |
MOSFET, N-CH, 600V, 8A, POWERPAKSO, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.45ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
2909 |
| Part Number | Description | Stock |
|
SIHJ8N60ET1GE3 Vishay Intertechnologies |
OEM/CM ONLY |
3016 |
| Part Number | Description | Stock |
|
SIHJ8N60E-T1-GE3 Vishay Intertechnologies |
MOSFET 600V Vds 30V Vgs PowerPAK SO-8L pbFree: Pb-Free
|
Americas - 0 |
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| In Stock | 412 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| 100 | $ 0.0000 | $ 0.0000 |
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