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SIHD4N80E-GE3

SIHD4N80E-GE3
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For Reference Only

Part Number SIHD4N80E-GE3
OEMstron Part # SIHD4N80E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CHAN 800V FP TO-252
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHD4N80E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIHD4N80E-GE3 Specifications

Part Number SIHD4N80E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series E
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 622pF @ 100V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252AA)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

SIHD4N80E-GE3 Documents

SIHD4N80E-GE3, SIHD4N80E-GE3 Datasheet (Total Pages: 9, Size: 190.08 KB)
SIHD4N80E-GE3 Datasheet CoverSIHD4N80E-GE3 Datasheet Page 2SIHD4N80E-GE3 Datasheet Page 3SIHD4N80E-GE3 Datasheet Page 4SIHD4N80E-GE3 Datasheet Page 5SIHD4N80E-GE3 Datasheet Page 6SIHD4N80E-GE3 Datasheet Page 7SIHD4N80E-GE3 Datasheet Page 8SIHD4N80E-GE3 Datasheet Page 9
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