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SIHD2N80E-GE3

SIHD2N80E-GE3
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For Reference Only

Part Number SIHD2N80E-GE3
OEMstron Part # SIHD2N80E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 800V 2.8A DPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHD2N80E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIHD2N80E-GE3 Specifications

Part Number SIHD2N80E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series E
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 100V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252AA)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

SIHD2N80E-GE3 Documents

SIHD2N80E-GE3, SIHD2N80E-GE3 Datasheet (Total Pages: 9, Size: 175.56 KB)
SIHD2N80E-GE3 Datasheet CoverSIHD2N80E-GE3 Datasheet Page 2SIHD2N80E-GE3 Datasheet Page 3SIHD2N80E-GE3 Datasheet Page 4SIHD2N80E-GE3 Datasheet Page 5SIHD2N80E-GE3 Datasheet Page 6SIHD2N80E-GE3 Datasheet Page 7SIHD2N80E-GE3 Datasheet Page 8SIHD2N80E-GE3 Datasheet Page 9
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