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| Part Number | SIE836DF-T1-GE3 |
| OEMstron Part # | SIE836DF-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 200V 18.3A POLARPAK |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | SIE836DF-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 23 - May 28 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SIE836DF-T1-GE3 Specifications
| Part Number | SIE836DF-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 18.3A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 4.1A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 10-PolarPAK® (SH) | |
| Package / Case | 10-PolarPAK® (SH) |
SIE836DF-T1-GE3 Documents
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| Part Number | Description | Stock |
|
SIE836DF-T1-GE3 Vishay Siliconix |
MOSFET N-CH 200V 18.3A POLARPAK |
Contact Us |
| Part Number | Description | Stock |
|
SIE836DF-T1-GE3 D# SIE836DF-T1-GE3TR-ND Vishay Siliconix |
MOSFET N-CH 200V 18.3A 10POLARPK |
Limited Supply - Call |
| Part Number | Description | Stock |
|
SIE836DF-T1-GE3 D# NS-SIE836DF-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
2595 |
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