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| Part Number | SIB412DK-T1-GE3 |
| OEMstron Part # | SIB412DK-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 20V 9A SC75-6 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | SIB412DK-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SIB412DK-T1-GE3 Specifications
| Part Number | SIB412DK-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 6.6A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 10.16nC @ 5V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 535pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SC-75-6L Single | |
| Package / Case | PowerPAK® SC-75-6L |
SIB412DK-T1-GE3 Documents
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| Part Number | Description | Stock |
|
SIB412DK-T1-GE3 Vishay Siliconix |
MOSFET N-CH 20V 9A SC75-6 |
Contact Us |
| Part Number | Description | Stock |
|
SIB412DK-T1-GE3 D# SIB412DK-T1-GE3-ND Vishay Siliconix |
MOSFET N-CH 20V 9A PPAK SC75-6 |
Limited Supply - Call |
| Part Number | Description | Stock |
|
SIB412DK-T1-GE3 D# NS-SIB412DK-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
7353 |
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