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For Reference Only
| Part Number | SIA406DJ-T1-GE3 |
| OEMstron Part # | SIA406DJ-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 12V 4.5A SC-70-6 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | SIA406DJ-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SIA406DJ-T1-GE3 Specifications
| Part Number | SIA406DJ-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 12V | |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 19.8mOhm @ 10.8A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 5V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 6V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SC-70-6 Single | |
| Package / Case | PowerPAK® SC-70-6 |
SIA406DJ-T1-GE3 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
SIA406DJ-T1-GE3 D# V72:2272_09216822 Vishay Intertechnologies |
Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant
|
Americas - 2360 |
| Part Number | Description | Stock |
|
SIA406DJ-T1-GE3 Vishay Intertechnologies |
1957 |
| Part Number | Description | Stock |
|
SIA406DJ-T1-GE3 Vishay Siliconix |
N CHANNEL MOSFET, 12V, 4.5A, Transistor Polarity:N Channel, Continuous Drain Current Id:4.5A, Drain Source Voltage Vds:12V, On Resistance Rds(on):19.8mohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1V, No. of Pins:6 , RoHS Compliant: Yes |
2170 |
| Part Number | Description | Stock |
|
SIA406DJT1GE3 Vishay Intertechnologies |
Power Field-Effect Transistor, 4.5A I(D), 12V, 0.0198ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant
|
Europe - 3000 |
| Part Number | Description | Stock |
|
SIA406DJ-T1-GE3 D# SIA406DJ-T1-GE3TR-ND Vishay Siliconix |
MOSFET N-CH 12V 4.5A PPAK SC70-6 |
Limited Supply - Call |
| Part Number | Description | Stock |
|
SIA406DJ-T1-GE3 VBsemi Electronics Co Ltd |
In stock shipping within 2days |
17845 |
| Part Number | Description | Stock |
|
SIA406DJT1GE3 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
3570 |
| Part Number | Description | Stock |
|
SIA406DJ-T1-GE3 D# 35R6183 Vishay Intertechnologies |
N CHANNEL MOSFET, 12V, 4.5A, Transistor Polarity:N Channel, Drain Source Voltage Vds:12V, Continuous Drain Current Id:4.5A, On Resistance Rds(on):0.0198ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 3000
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
SIA406DJ-T1-GE3 D# NS-SIA406DJ-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
3065 |
| Part Number | Description | Stock |
|
SIA406DJT1GE3 Vishay Intertechnologies |
OEM/CM ONLY |
3016 |
| Part Number | Description | Stock |
|
SIA406DJ-T1-GE3 D# 30286380 Vishay Intertechnologies |
Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant
|
Americas - 2360 |
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| In Stock | 320 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | Can Ship Immediately |
| Minimum | 1 |
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| 100 | $ 0.0000 | $ 0.0000 |
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| 1000 | $ 0.0000 | $ 0.0000 |
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