Name: SI7794DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7794DP-T1-GE3
Rating: 5 (129 reviews)

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Part Number	SI7794DP-T1-GE3
OEMstron Part #	SI7794DP-T1-GE3
Manufacturer	Vishay Siliconix
Category	Semiconductors › Transistors › FETs, MOSFETs - Single
Description	MOSFET N-CH 30V P-PACK SO-8
Lifecycle	Obsolete
RoHS	No RoHS Information
EDA/CAD Models	SI7794DP-T1-GE3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	May 12 - May 17 (Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

Part Number	SI7794DP-T1-GE3
Brand	Vishay Siliconix
Lifecycle	Obsolete
RoHS	No RoHS Information
Product Line	Semiconductors
Category	Transistors
Subcategory	FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	SkyFET®, TrenchFET® Gen III
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	28.6A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2.52nF @ 15V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	5W (Ta), 48W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SI7794DP-T1-GE3 Specifications