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For Reference Only
| Part Number | SI3447BDV-T1-GE3 |
| OEMstron Part # | SI3447BDV-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 12V 4.5A 6-TSOP |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI3447BDV-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 20 - May 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI3447BDV-T1-GE3 Specifications
| Part Number | SI3447BDV-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 12V | |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 6A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.1W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-TSOP | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
SI3447BDV-T1-GE3 Documents
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| Part Number | Description | Stock |
|
SI3447BDV-T1-GE3 Vishay Siliconix |
P CHANNEL MOSFET, -12V, 4.5A, Transistor Polarity:P Channel, Continuous Drain Current Id:-4.5A, Drain Source Voltage Vds:-12V, On Resistance Rds(on):40mohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:1V, No. of Pins:6 , RoHS Compliant: Yes |
2220 |
| Part Number | Description | Stock |
|
SI3447BDV-T1-GE3 D# SI3447BDV-T1-GE3-ND Vishay Siliconix |
MOSFET P-CH 12V 4.5A 6TSOP |
Limited Supply - Call |
| Part Number | Description | Stock |
|
SI3447BDV-T1-GE3 Vishay Intertechnologies |
In stock shipping within 2days |
30525 |
| Part Number | Description | Stock |
|
SI3447BDV-T1-GE3 D# 1871348 Vishay Intertechnologies |
P CHANNEL MOSFET, -12V, 4.5A RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
SI3447BDVT1GE3 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
438 |
| Part Number | Description | Stock |
|
SI3447BDV-T1-GE3 D# 26R1868 Vishay Intertechnologies |
P CHANNEL MOSFET, -12V, 4.5A, Transistor Polarity:P Channel, Drain Source Voltage Vds:12V, Continuous Drain Current Id:4.5A, On Resistance Rds(on):0.04ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 3000
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
SI3447BDV-T1-GE3 D# NS-SI3447BDV-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
7475 |
| Part Number | Description | Stock |
|
SI3447BDVT1GE3 Vishay Siliconix |
OEM/CM ONLY |
384 |
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