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| Part Number | SCTH90N65G2V-7 |
| OEMstron Part # | SCTH90N65G2V-7 |
| Manufacturer | STMicroelectronics |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | SILICON CARBIDE POWER MOSFET 650 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SCTH90N65G2V-7 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SCTH90N65G2V-7 Specifications
| Part Number | SCTH90N65G2V-7 | |
| Brand | STMicroelectronics | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | STMicroelectronics | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 50A, 18V | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 157nC @ 18V | |
| Vgs (Max) | +22V, -10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 400V | |
| FET Feature | - | |
| Power Dissipation (Max) | 330W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | H2PAK-7 | |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
SCTH90N65G2V-7 Documents
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| In Stock | 279 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 38.3501 | $ 38.3501 |
| 100 | $ 38.3501 | $ 3,835.0100 |
| 500 | $ 38.3501 | $ 19,175.0500 |
| 1000 | $ 38.3501 | $ 38,350.1000 |
| 2500 | $ 38.3501 | $ 95,875.2500 |
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