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| Part Number | RQA0004PXDQS#H1 |
| OEMstron Part # | RQA0004PXDQS-H1 |
| Manufacturer | Renesas Electronics America |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH UPAK |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | RQA0004PXDQS#H1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
RQA0004PXDQS#H1 Specifications
| Part Number | RQA0004PXDQS#H1 | |
| Brand | Renesas Electronics America | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Renesas Electronics America | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 16V | |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | 900mV @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±5V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | 3W (Ta) | |
| Operating Temperature | 150°C | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | UPAK | |
| Package / Case | TO-243AA |
RQA0004PXDQS#H1 Documents
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