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| Part Number | RJK0603DPN-E0#T2 |
| OEMstron Part # | RJK0603DPN-E0-T2 |
| Manufacturer | Renesas Electronics America |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 60V 80A TO220 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | RJK0603DPN-E0#T2 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
RJK0603DPN-E0#T2 Specifications
| Part Number | RJK0603DPN-E0#T2 | |
| Brand | Renesas Electronics America | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Renesas Electronics America | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 40A, 10V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4150pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 125W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
RJK0603DPN-E0#T2 Documents
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| Part Number | Description | Stock |
|
RJK0603DPN-E0#T2 Renesas Electronics Corporation |
POWER MOSFET - Rail/Tube |
Contact Us |
| Part Number | Description | Stock |
|
RJK0603DPN-E0#T2 D# RJK0603DPN-E0#T2-ND Renesas Electronics Corporation |
MOSFET N-CH 60V 80A TO220AB |
Limited Supply - Call |
| Part Number | Description | Stock |
|
RJK0603DPN-E0#T2 D# NS-RJK0603DPN-E0#T2 Renesas Electronics Corporation |
OEM/CM ONLY |
6273 |
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