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| Part Number | NVD5C648NLT4G |
| OEMstron Part # | NVD5C648NLT4G |
| Manufacturer | ON Semiconductor |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | T6 60V LL DPAK |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | NVD5C648NLT4G PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
NVD5C648NLT4G Specifications
| Part Number | NVD5C648NLT4G | |
| Brand | ON Semiconductor | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Series | Automotive, AEC-Q101 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 89A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 45A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.1W (Ta), 72W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DPAK | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
NVD5C648NLT4G Documents
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| In Stock | 450 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 1.3070 | $ 1.3070 |
| 100 | $ 1.3070 | $ 130.7000 |
| 500 | $ 1.3070 | $ 653.5000 |
| 1000 | $ 1.3070 | $ 1,307.0000 |
| 2500 | $ 1.3070 | $ 3,267.5000 |
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