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| Part Number | NTD5867NL-1G |
| OEMstron Part # | NTD5867NL-1G |
| Manufacturer | ON Semiconductor |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 60V 20A IPAK |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | NTD5867NL-1G PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 11 - May 16 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
NTD5867NL-1G Specifications
| Part Number | NTD5867NL-1G | |
| Brand | ON Semiconductor | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 675pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 36W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | I-PAK | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
NTD5867NL-1G Documents
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| Part Number | Description | Stock |
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NTD5867NL-1G ON Semiconductor |
Single N-Channel 60 V 39 mOhm 7.6 nC 36 W Through Hole Power Mosfet - I-PAK-3 |
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| Part Number | Description | Stock |
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NTD5867NL-1G D# 2156-NTD5867NL-1G-ON-ND Rochester Electronics LLC |
MOSFET N-CH 60V 20A IPAK |
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NTD5867NL-1G ON Semiconductor |
In stock shipping within 2days |
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NTD5867NL-1G D# NS-NTD5867NL-1G ON Semiconductor |
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