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For Reference Only
| Part Number | IXTM35N30 |
| OEMstron Part # | IXTM35N30 |
| Manufacturer | IXYS |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | POWER MOSFET TO-3 |
| Lifecycle | Last Time Buy |
| RoHS | No RoHS Information |
| EDA/CAD Models | IXTM35N30 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 14 - May 19 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IXTM35N30 Specifications
| Part Number | IXTM35N30 | |
| Brand | IXYS | |
| Lifecycle | Last Time Buy | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | IXYS | |
| Series | GigaMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 300V | |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 17.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 220nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4600pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 300W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-204AE | |
| Package / Case | TO-204AE |
IXTM35N30 Documents
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| In Stock | 339 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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