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IXTA88N085T7

IXTA88N085T7
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Part Number IXTA88N085T7
OEMstron Part # IXTA88N085T7
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 85V 88A TO-263-7
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IXTA88N085T7 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IXTA88N085T7 Specifications

Part Number IXTA88N085T7
Brand IXYS
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series TrenchMV™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3140pF @ 25V
FET Feature -
Power Dissipation (Max) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-7 (IXTA..7)
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

IXTA88N085T7 Documents

IXTA88N085T7, IXTA88N085T7 Datasheet (Total Pages: 5, Size: 165.74 KB)
IXTA88N085T7 Datasheet CoverIXTA88N085T7 Datasheet Page 2IXTA88N085T7 Datasheet Page 3IXTA88N085T7 Datasheet Page 4IXTA88N085T7 Datasheet Page 5
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Part Number Description Stock

IXTA88N085T7

IXYS Corporation

MOSFET N-CH 85V 88A TO-263-7

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Part Number Description Stock

IXTA88N085T7

D# IXTA88N085T7-ND

IXYS Corporation

MOSFET N-CH 85V 88A TO263-7

Limited Supply - Call
Part Number Description Stock

IXTA88N085T7

D# NS-IXTA88N085T7

IXYS Corporation

OEM/CM ONLY

9987
Part Number Description Stock

IXTA88N085T7

IXYS Corporation

RFQ

12949

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