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For Reference Only
| Part Number | IXFP12N65X2 |
| OEMstron Part # | IXFP12N65X2 |
| Manufacturer | IXYS |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IXFP12N65X2 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IXFP12N65X2 Specifications
| Part Number | IXFP12N65X2 | |
| Brand | IXYS | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | IXYS | |
| Series | HiPerFET™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 18.5nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1134pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 180W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
IXFP12N65X2 Documents
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| In Stock | 122 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 4.0460 | $ 4.0460 |
| 100 | $ 4.0460 | $ 404.6000 |
| 500 | $ 4.0460 | $ 2,023.0000 |
| 1000 | $ 4.0460 | $ 4,046.0000 |
| 2500 | $ 4.0460 | $ 10,115.0000 |
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