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| Part Number | IRF6706S2TR1PBF |
| OEMstron Part # | IRF6706S2TR1PBF |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 25V 17A DIRECTFET-S1 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | IRF6706S2TR1PBF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IRF6706S2TR1PBF Specifications
| Part Number | IRF6706S2TR1PBF | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 25V | |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 63A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1810pF @ 13V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.8W (Ta), 26W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DIRECTFET S1 | |
| Package / Case | DirectFET™ Isometric S1 |
IRF6706S2TR1PBF Documents
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| Part Number | Description | Stock |
|
IRF6706S2TR1PBF International Rectifier |
MOSFET N-CH 25V 17A DIRECTFET-S1 |
893 |
| Part Number | Description | Stock |
|
IRF6706S2TR1PBF D# IRF6706S2TR1PBFCT-ND Infineon Technologies AG |
MOSFET N-CH 25V 17A DIRECTFET |
863 In Stock |
| Part Number | Description | Stock |
|
IRF6706S2TR1PBF D# NS-IRF6706S2TR1PBF International Rectifier |
OEM/CM ONLY |
6884 |
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