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IPU103N08N3 G

IPU103N08N3 G
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Part Number IPU103N08N3 G
OEMstron Part # IPU103N08N3-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 80V 50A TO251-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPU103N08N3 G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPU103N08N3 G Specifications

Part Number IPU103N08N3 G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 10.3mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 40V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

IPU103N08N3 G Documents

IPU103N08N3 G, IPU103N08N3 G Datasheet (Total Pages: 9, Size: 613.82 KB)
IPU103N08N3 G Datasheet CoverIPU103N08N3 G Datasheet Page 2IPU103N08N3 G Datasheet Page 3IPU103N08N3 G Datasheet Page 4IPU103N08N3 G Datasheet Page 5IPU103N08N3 G Datasheet Page 6IPU103N08N3 G Datasheet Page 7IPU103N08N3 G Datasheet Page 8IPU103N08N3 G Datasheet Page 9
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MOSFET N-CH 80V 50A TO251-3

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