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IPS105N03LGAKMA1

IPS105N03LGAKMA1
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For Reference Only

Part Number IPS105N03LGAKMA1
OEMstron Part # IPS105N03LGAKMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 35A TO251-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPS105N03LGAKMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPS105N03LGAKMA1 Specifications

Part Number IPS105N03LGAKMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
FET Feature -
Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Stub Leads, IPak

IPS105N03LGAKMA1 Documents

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Part Number Description Stock

IPS105N03LGAKMA1

D# IPS105N03LGAKMA1

Infineon Technologies AG

Trans MOSFET N-CH 30V 35@10VA 3-Pin TO-251 Tube - Bulk (Alt: IPS105N03LGAKMA1)

RoHS: Compliant
Americas - 27000
Part Number Description Stock

IPS105N03LGAKMA1

D# 2156-IPS105N03LGAKMA1-IT-ND

Rochester Electronics LLC

MOSFET N-CH 30V 35A TO251-3

27000 In Stock
Part Number Description Stock

IPS105N03LGAKMA1

Rochester Electronics LLC

OEM/CM QUOTES ONLY | NO BROKERS

31320
Part Number Description Stock

IPS105N03LGAKMA1

Infineon Technologies AG

Power Field-Effect Transistor, 35A, 30V, 0.0105ohm, N-Channel, MOSFET

RoHS: Compliant
27000

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